CONSIDERATIONS TO KNOW ABOUT N TYPE GE

≤ 0.15) is epitaxially grown over a SOI substrate. A thinner layer of Si is grown on this SiGe layer, and after that the structure is cycled as a result of oxidizing and annealing stages. Due to the preferential oxidation of Si around Ge [68], the first Si1–Charge. Apparently, the team found that increasing the Si cap thickness beyond 0.six nm